Semiconductor wafer bonding

被引:191
作者
Gosele, U
Tong, QY
机构
[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
[2] Duke Univ, Sch Engn, Wafer Bonding Lab, Durham, NC 27708 USA
来源
ANNUAL REVIEW OF MATERIALS SCIENCE | 1998年 / 28卷
关键词
silicon-on-insulator; surface energy; UHV bonding; compliant substrate;
D O I
10.1146/annurev.matsci.28.1.215
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
When mirror-polished, flat, and clean wafers of almost any material are brought into contact at room temperature, they are locally attracted to each other by van der Waals forces and adhere or bond. This phenomenon is referred to as wafer bonding. The most prominent applications of wafer bonding are silicon-on-insulator (SOI) devices, silicon-based sensors and actuators, as well as optical devices. The basics of wafer-bonding technology are described, including microclean-room approaches, prevention of interface bubbles, bonding of III-V compounds, low-temperature bonding, ultra-high vacuum bonding, thinning methods such as smart-cut procedures, and twist wafer bonding for compliant substrates. Wafer bonding allows a new degree of freedom in design and fabrication of material combinations that previously would have been excluded because these material combinations cannot be realized by the conventional approach of epitaxial growth.
引用
收藏
页码:215 / 241
页数:27
相关论文
共 120 条
[71]   SPLITTING OF MICA CRYSTALS AND SURFACE-ENERGY [J].
METSIK, MS .
JOURNAL OF ADHESION, 1972, 3 (04) :307-&
[72]   CAUSES AND PREVENTION OF TEMPERATURE-DEPENDENT BUBBLES IN SILICON-WAFER BONDING [J].
MITANI, K ;
LEHMANN, V ;
STENGL, R ;
FEIJOO, D ;
GOSELE, UM ;
MASSOUD, HZ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04) :615-622
[73]   WAFER BONDING TECHNOLOGY FOR SILICON-ON-INSULATOR APPLICATIONS - A REVIEW [J].
MITANI, K ;
GOSELE, UM .
JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (07) :669-676
[74]   PERPENDICULAR HOT-ELECTRON SPIN-VALVE EFFECT IN A NEW MAGNETIC-FIELD SENSOR - THE SPIN-VALVE TRANSISTOR [J].
MONSMA, DJ ;
LODDER, JC ;
POPMA, TJA ;
DIENY, B .
PHYSICAL REVIEW LETTERS, 1995, 74 (26) :5260-5263
[75]  
Monsma DJ, 1997, IEEE T MAGN, V33, P3495, DOI 10.1109/20.619478
[76]  
MORI K, 1996, P IEEE LEOS 96 C, P296
[77]  
MUOMOLA PB, 1993, 2 INT S SEM WAF BOND, V29, P410
[78]   DIRECT BONDING OF PIEZOELECTRIC CRYSTAL ONTO SILICON [J].
NAMBA, A ;
SUGIMOTO, M ;
OGURA, T ;
TOMITA, Y ;
EDA, K .
APPLIED PHYSICS LETTERS, 1995, 67 (22) :3275-3276
[79]  
NAMBA A, 1995, APPL PHYS LETT, V67, P827
[80]  
OBERMEIER E, 1995, 3 INT S SEM WAF BOND, V7, P212