DIRECT BONDING OF PIEZOELECTRIC CRYSTAL ONTO SILICON

被引:31
作者
NAMBA, A
SUGIMOTO, M
OGURA, T
TOMITA, Y
EDA, K
机构
[1] Materials and Devices Laboratory, Matsushita Electric Industrial Co. Ltd., Osaka 571
关键词
D O I
10.1063/1.114896
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method for bonding a piezoelectric crystal directly onto silicon, without any bonding agents, is reported. The interface microstructure, procedures of fabricating a lithium tantalate (LiTaO3)-on-silicon resonator, and its resonant characteristics are described. This technique is very promising for miniaturizing electroacoustic integrated devices. (C) 1995 American Institute of Physics.
引用
收藏
页码:3275 / 3276
页数:2
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