DIRECT BONDING OF PIEZOELECTRIC CRYSTAL ONTO SILICON

被引：31

作者：

NAMBA, A

SUGIMOTO, M

OGURA, T

TOMITA, Y

EDA, K

机构：

[1] Materials and Devices Laboratory, Matsushita Electric Industrial Co. Ltd., Osaka 571

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 22期

关键词：

D O I：

10.1063/1.114896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for bonding a piezoelectric crystal directly onto silicon, without any bonding agents, is reported. The interface microstructure, procedures of fabricating a lithium tantalate (LiTaO3)-on-silicon resonator, and its resonant characteristics are described. This technique is very promising for miniaturizing electroacoustic integrated devices. (C) 1995 American Institute of Physics.

引用

页码：3275 / 3276

页数：2

共 9 条

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[7] MASZARA WP, 1991, 1ST P EL SOC INT S S, P674
[8] SILICON-TO-SILICON DIRECT BONDING METHOD
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[9] BUBBLE-FREE SILICON-WAFER BONDING IN A NON-CLEANROOM ENVIRONMENT
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