Characteristics of Pt and TaN metal gate electrode for high-κ hafnium oxide gate dielectrics

被引：13

作者：

Choi, KJ ^{[1
]}

Yoon, SG ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 03期

关键词：

D O I：

10.1149/1.1645754

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

TaN gate electrodes for HfO2 gate dielectric were prepared using dc magnetron sputtering and compared with Pt gate electrode in terms of thermal stability at a post metal annealing (PMA) temperature of 900 degreesC for 1 min in N-2. The increase of nitrogen content in Ta1-xNx electrode produces an increase of resistivity and Ta0.463N0.537 electrodes showed a good thermal stability of resistivity even at an annealing temperature of 1000 degreesC for 1 min in N-2 ambient. TaN/HfO2 /Si capacitors showed superior properties to Pt/ HfO2 /Si capacitors in capacitance-voltage and current-voltage characteristics. TaN gate electrodes are suitable for application to high-k hafnium oxide gate dielectrics. (C) 2004 The Electrochemical Society.

引用

页码：G47 / G49

页数：3

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