Ultra thin and ultra long SiC/SiO2 nanocables from catalytic pyrolysis of poly(dimethyl siloxane)

被引：32

作者：

Cai, K. F.

Zhang, A. X.

Yin, J. L.

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Tongji Univ, Shanghai Key Lab Dev & Applicat Met Funct Mat, Shanghai 200092, Peoples R China

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 48期

关键词：

D O I：

10.1088/0957-4484/18/48/485601

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiC/SiO2 nanocables were synthesized by pyrolysis of poly( dimethyl siloxane) using ferrocene as a catalyst precursor at similar to 1050 degrees C in Ar. The as-grown product was characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and high-resolution electron microscopy. The length of the nanocables is in the millimeter range and the diameter of most nanocables is in the range of about 5-10 nm. The vapor-liquid-solid (VLS) mechanism was proposed to elucidate the growth process of the nanocables.

引用

收藏

页数：6

相关论文

共 47 条

[1] Simple route to ultra long SIC nanowires [J].

Cai, K. F. ;

Lei, Q. ;

Zhang, A. X. .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2007, 7 (02) :580-583

[2] Ultra long SiC/SiO2 core-shell nanocables from organic precursor [J].

Cai, KF ;

Lei, Q ;

Zhang, LC .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2005, 5 (11) :1925-1928

[3] Large-scale and low-cost synthesis of single-walled carbon nanotubes by the catalytic pyrolysis of hydrocarbons [J].

Cheng, HM ;

Li, F ;

Su, G ;

Pan, HY ;

He, LL ;

Sun, X ;

Dresselhaus, MS .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3282-3284

[4] Extreme oxygen sensitivity of electronic properties of carbon nanotubes [J].

Collins, PG ;

Bradley, K ;

Ishigami, M ;

Zettl, A .

SCIENCE, 2000, 287 (5459) :1801-1804

[5] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[6] LOW-TEMPERATURE GROWTH OF SIC THIN-FILMS ON SI AND 6H-SIC BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY [J].

FISSEL, A ;

SCHROTER, B ;

RICHTER, W .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3182-3184

[7] Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].

Gudiksen, MS ;

Lauhon, LJ ;

Wang, J ;

Smith, DC ;

Lieber, CM .

NATURE, 2002, 415 (6872) :617-620

[8] Nucleation and growth of germanium nanowires seeded by organic monolayer-coated gold nanocrystals [J].

Hanrath, T ;

Korgel, BA .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (07) :1424-1429

[9]

Harris G.L., 1995, Properties of Silicon Carbide

[10] Control of thickness and orientation of solution-grown silicon nanowires [J].

Holmes, JD ;

Johnston, KP ;

Doty, RC ;

Korgel, BA .

SCIENCE, 2000, 287 (5457) :1471-1473

← 1 2 3 4 5 →