W/Si multilayers deposited by hot-filament MOCVD

被引：6

作者：

Hamelmann, F

Petri, SHA

Klipp, A

Haindl, G

Hartwich, J

Dreeskornfeld, L

Kleineberg, U

Jutzi, P

Heinzmann, U

机构：

[1] Univ Bielefeld, Fac Phys, D-33615 Bielefeld, Germany

[2] Univ Bielefeld, Fac Chem, D-33615 Bielefeld, Germany

来源：

THIN SOLID FILMS | 1999年 / 338卷 / 1-2期

关键词：

chemical vapour deposition (CVD); multilayers; silicon; tungsten;

D O I：

10.1016/S0040-6090(98)00996-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

W/Si multilayers with eight double layers (double layer spacing d = 20 nm) were deposited on Si [100] substrates using hot-filament (or hot-wire) metal organic chemical vapor deposition (MOCVD). The process was performed in a stainless steel reactor with a tungsten filament at a temperature of 1000 degrees C and a substrate temperature of 190 degrees C. The him thickness and growth was controlled by an in situ soft X-ray reflectivity measurement. The multilayers were characterized by cross-section transmission electron microscopy (XTEM) and sputter auger electron spectroscopy (AES). The results are compared to W/Si bilayers, which were deposited without a hot-filament at higher substrate temperatures (500-670 degrees C). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：70 / 74

页数：5

共 22 条

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