Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1-x)As (x∼0.8) quantum wells grown on InP

被引：11

作者：

Lai, KT

Missous, M

Gupta, R

Haywood, SK

机构：

[1] Univ Hull, Dept Engn, Kingston Upon Hull HU6 7RX, N Humberside, England

[2] UMIST, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1565688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of strong room temperature absorption peaks between 4 and 7 mum in strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier multiple-quantum-well structures. The observed peaks at 4.4, 5.0, and 7.2 mum are attributed to E-3-->E-4, E-2-->E-3, and E-1-->E-2 Gamma-Gamma electron intersubband transitions, respectively, the transition energies are in good agreement with our theoretical model. The large conduction band offset and low effective mass in this material system, as well as the possibility for strain compensation between wells and barriers, make this a promising route to efficient room temperature quantum well infrared photodetectors. (C) 2003 American Institute of Physics.

引用

页码：6065 / 6067

页数：3

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