Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures

被引：73

作者：

Zhang, J. P. ^{[1
]}

Zhang, L. D. ^{[1
]}

Zhu, L. Q. ^{[1
]}

Zhang, Y. ^{[1
]}

Liu, M. ^{[1
]}

Wang, X. J. ^{[1
]}

He, G. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] Univ Tokyo, Sch Engn, Dept Appl Phys, Tokyo 1138656, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2817255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm(-1). According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 degrees C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A(0)X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N)(O) and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed. (c) 2007 American Institute of Physics.

引用

页数：7

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