Characterization of ZnO:N films prepared by annealing sputtered zinc oxynitride films at different temperatures

被引：73

作者：

Zhang, J. P. ^{[1
]}

Zhang, L. D. ^{[1
]}

Zhu, L. Q. ^{[1
]}

Zhang, Y. ^{[1
]}

Liu, M. ^{[1
]}

Wang, X. J. ^{[1
]}

He, G. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

[2] Univ Tokyo, Sch Engn, Dept Appl Phys, Tokyo 1138656, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2817255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-doped ZnO films were prepared by annealing zinc oxynitride films deposited by rf reactive sputtering. Two Raman peaks were observed at 274 and 580 cm(-1). According to the variation of the integral intensity of these two peaks, the nitrogen activation at 500 degrees C [the activation temperature (AT)] has been obtained. Below the AT, the integral intensities of them show a different variation trend. X-ray photoelectron spectroscopy (XPS) indicates the N chemical state variation for them and finds the activated Zn-N bond. Further analyses by photoluminescence (PL) spectra and spectroscopic ellipsometry (SE) have been carried out. The activated sample exhibits a symmetric emission peak at 3.22 eV assigned to be the A(0)X emission at room temperature. SE investigation takes account of samples within the different temperature span divided by the AT. Different factors, such as nitrogen dopant (N)(O) and the nanocrystal growth, which affect the redshift of the absorption edges, have been discussed. (c) 2007 American Institute of Physics.

引用

页数：7

共 37 条

[11] Luminescence and surface properties of MgxZn1-xO thin films grown by pulsed laser deposition [J].

Heitsch, S. ;

Zimmermann, G. ;

Fritsch, D. ;

Sturm, C. ;

Schmidt-Grund, R. ;

Schulz, C. ;

Hochmuth, H. ;

Spemann, D. ;

Benndorf, G. ;

Rheinlaender, B. ;

Nobis, Th. ;

Lorenz, M. ;

Grundmann, M. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (08)

[12] ZnO p-n junction light-emitting diodes fabricated on sapphire substrates -: art. no. 031911 [J].

Jiao, SJ ;

Zhang, ZZ ;

Lu, YM ;

Shen, DZ ;

Yao, B ;

Zhang, JY ;

Li, BH ;

Zhao, DX ;

Fan, XW ;

Tang, ZK .

APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3

[13] Fabrication of the low-resistive p-type ZnO by codoping method [J].

Joseph, M ;

Tabata, H ;

Saeki, H ;

Ueda, K ;

Kawai, T .

PHYSICA B-CONDENSED MATTER, 2001, 302 :140-148

[14] Nitrogen-related local vibrational modes in ZnO:N [J].

Kaschner, A ;

Haboeck, U ;

Strassburg, M ;

Kaczmarczyk, G ;

Hoffmann, A ;

Thomsen, C ;

Zeuner, A ;

Alves, HR ;

Hofmann, DM ;

Meyer, BK .

APPLIED PHYSICS LETTERS, 2002, 80 (11) :1909-1911

[15] Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films [J].

Li, BS ;

Liu, YC ;

Zhi, ZZ ;

Shen, DZ ;

Lu, YM ;

Zhang, JY ;

Fan, XW ;

Mu, RX ;

Henderson, DO .

JOURNAL OF MATERIALS RESEARCH, 2003, 18 (01) :8-13

[16] Substitutional diatomic molecules NO, NC, CO, N2, and O2:: Their vibrational frequencies and effects on p doping of ZnO -: art. no. 211910 [J].

Limpijumnong, S ;

Li, XN ;

Wei, SH ;

Zhang, SB .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[17] Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures [J].

Liu, M. ;

Fang, Q. ;

He, G. ;

Zhu, L. Q. ;

Zhang, L. D. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)

[18] Method of control of nitrogen content in ZnO films: Structural and photoluminescence properties [J].

Ma, JG ;

Liu, YC ;

Mu, R ;

Zhang, JY ;

Lu, YM ;

Shen, DZ ;

Fan, XW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01) :94-98

[19] Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements [J].

Morral, AFI ;

Cabarrocas, PRI ;

Clerc, C .

PHYSICAL REVIEW B, 2004, 69 (12)

[20] Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films [J].

Nakano, Y ;

Morikawa, T ;

Ohwaki, T ;

Taga, Y .

APPLIED PHYSICS LETTERS, 2006, 88 (17)

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