Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films

被引：111

作者：

Nakano, Y ^{[1
]}

Morikawa, T ^{[1
]}

Ohwaki, T ^{[1
]}

Taga, Y ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 17期

关键词：

D O I：

10.1063/1.2198489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on p-type conduction in N-doped ZnO (ZnO:N) films that were prepared by oxidative annealing of sputtered Zn3N2 films at temperatures between 500 and 800 degrees C in flowing O-2 gas. Room-temperature Hall-effect measurements show a significant improvement of p-type doping characteristics by the oxidative annealing at temperatures between 700 and 800 degrees C, where more N acceptors are activated and the oxidation state is enhanced, as confirmed by deep-level optical spectroscopy and secondary ion mass spectrometry measurements. Therefore, the high-temperature oxidation of Zn3N2 is effective in moderating the self-compensation effect in ZnO:N from the viewpoint of oxygen vacancy annihilation. (c) 2006 American Institute of Physics.

引用

页数：3

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