Via-hole-based vertical GaN light emitting diodes

被引：21

作者：

Jung, Hyun-Min ^{[1
]}

Nam, Gi-Yeon ^{[1
]}

Choi, Byung-Kyun ^{[1
]}

Lee, Tae-Hee ^{[1
]}

Kim, Hyun-Suk ^{[1
]}

Jeon, Soo-Kun ^{[1
]}

Park, Eun-Hyun ^{[1
]}

Kim, Chang-Tae ^{[1
]}

机构：

[1] Epivalley Co Ltd, Kwangju 464892, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

关键词：

D O I：

10.1063/1.2785110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vertical GaN-light emitting diode (LED) has been fabricated on a sapphire substrate with periodic via holes formed by a laser drilling technique. n-contact metal which was deposited on the backside of sapphire substrate was directly connected with an Ohmic metal of n-GaN layer through the via holes. The via-hole-based vertical GaN-LED demonstrated an optical power improvement of up to 12.5% with lower forward operating voltage compared with a conventional GaN-LED. In addition, this vertical LED showed just 0.8% and 1.5% variations of optical power and operation voltage at the 500 h reliability test.

引用

页数：3

共 6 条

[1] Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire [J].