Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes

被引:109
作者
Wang, SJ [1 ]
Uang, KM
Chen, SL
Yang, YC
Chang, SC
Chen, TM
Chen, CH
Liou, BW
机构
[1] Natl Chung Cheng Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Wufeng Inst Technol, Dept Comp Sci & Informat Engn, Chiayi 621, Taiwan
关键词
D O I
10.1063/1.1993757
中图分类号
O59 [应用物理学];
学科分类号
摘要
The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward voltage drop of the VM-LED at 20-80 mA is about 10%-21% lower, while the light output power (L-op) is more than twice in magnitude. Especially, the L-op exhibits no saturation or degradation at an injection current up to 520 mA which is about 4.3 times higher than that of the regular one. Substantial improvements in the VM-LEDs performances are mainly attributed to the use of metallic substrate which results in less current crowding, larger effective area, and higher thermal conductivity. (c) 2005 American Institute of Physics.
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页数:3
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