High-power GaN light-emitting diodes with patterned copper substrates by electroplating

被引:17
作者
Horng, RH [1 ]
Lee, CE
Hsu, SC
Huang, SH
Wu, CC
Kung, CY
Wuu, DS
机构
[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung, Taiwan
[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung, Taiwan
[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung, Taiwan
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期
关键词
D O I
10.1002/pssa.200405091
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.
引用
收藏
页码:2786 / 2790
页数:5
相关论文
共 11 条
[1]   Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].
Chang, SJ ;
Chang, CS ;
Su, YK ;
Chuang, RW ;
Lin, YC ;
Shei, SC ;
Lo, HM ;
Lin, HY ;
Ke, JC .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443
[2]   Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off [J].
Chu, CF ;
Yu, CC ;
Cheng, HC ;
Lin, CF ;
Wang, SC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (2B) :L147-L150
[3]   Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].
Fujii, T ;
Gao, Y ;
Sharma, R ;
Hu, EL ;
DenBaars, SP ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857
[4]   Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN [J].
Horng, RH ;
Wuu, DS ;
Lien, YC ;
Lan, WH .
APPLIED PHYSICS LETTERS, 2001, 79 (18) :2925-2927
[5]  
Nagahama S, 2001, PHYS STATUS SOLIDI A, V188, P1, DOI 10.1002/1521-396X(200111)188:1<1::AID-PSSA1>3.0.CO
[6]  
2-S
[7]   HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].
NAKAMURA, S ;
SENOH, N ;
IWASA, N ;
NAGAHAMA, SI .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799
[8]   ULTRAHIGH SPONTANEOUS EMISSION QUANTUM EFFICIENCY, 99.7-PERCENT INTERNALLY AND 72-PERCENT EXTERNALLY, FROM ALGAAS/GAAS/ALGAAS DOUBLE HETEROSTRUCTURES [J].
SCHNITZER, I ;
YABLONOVITCH, E ;
CANEAU, C ;
GMITTER, TJ .
APPLIED PHYSICS LETTERS, 1993, 62 (02) :131-133
[9]   GaN Metal-Semiconductor-Metal Ultraviolet Sensors With Various Contact Electrodes [J].
Su, Y. K. ;
Chang, S. J. ;
Chen, C. H. ;
Chen, J. F. ;
Chi, G. C. ;
Sheu, J. K. ;
Lai, W. C. ;
Tsai, J. M. .
IEEE SENSORS JOURNAL, 2002, 2 (04) :366-371
[10]   Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates [J].
Wong, WS ;
Kneissl, M ;
Mei, P ;
Treat, DW ;
Teepe, M ;
Johnson, NM .
APPLIED PHYSICS LETTERS, 2001, 78 (09) :1198-1200