InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface

被引：37

作者：

Park, Eun-Hyun

Ferguson, Ian T.

Jeon, Soo-Kun

Park, Joong-Seo

Yoo, Tae-Kyung

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] EpiValley Co Ltd, Kwangju 464892, Kyunggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

D O I：

10.1063/1.2410229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To increase the light extraction efficiency, high density truncated hexagonal pyramid shaped submicron p-GaN hillocks were formed on the emission surface of an InGaN/GaN multiple quantum well light emitting dicode (LED) using an in situ silicon carbon nitride self-masking layer. The self-assembled hillock density was raised up to a low 10(9) cm(-2) using several nanometers of a Si0.4C0.6N1 self-masking layer. The self-assembled hillock LED resulted in the optical power improvement up to 80% with similar electrical properties as a normal LED. This device showed a higher electrostatic discharge pass yield at over 1000 V reverse stress voltage. (c) 2006 American Institute of Physics.

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页数：3

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