Nitride-based LEDs fabricated on patterned sapphire substrates

被引：109

作者：

Chang, SJ

Lin, YC

Su, YK

Chang, CS

Wen, TC

Shei, SC

Ke, JC

Kuo, CW

Chen, SC

Liu, CH

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] S Epitaxy Corp, Hsin Shi 744, Taiwan

[3] Kun Shan Univ Technol, Dept Elect Engn, Yung Kang 710, Taiwan

[4] Natl Yunlin Univ Sci & Techno, Dept Elect Engn, Touliu 640, Taiwan

[5] Nan Jeon Jr Coll Technol & Commerce, Dept Elect Engn, Yan Hsui 737, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 09期

关键词：

patterned sapphire substrate; InGaN/GaN; LED; PL; reliability;

D O I：

10.1016/S0038-1101(03)00073-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based blue LEDs prepared on both patterned and conventional sapphire substrates were both fabricated. It was found that although the EL peak positions of these two LEDs were about the same, the EL intensity of LED grown on patterned sapphire substrate was about 35% larger. The maximum output power of LED grown on patterned sapphire substrate also occurred at higher injection current. The reliability of LED grown on patterned sapphire substrate was also found to be better. There improvements could all be attributed to the reduced dislocation density in the LEDs grown on patterned sapphire substrates. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1539 / 1542

页数：4

共 27 条

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