Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays

被引：5

作者：

Rajavel, RD ^{[1
]}

Jamba, D ^{[1
]}

Wu, OK ^{[1
]}

Roth, JA ^{[1
]}

Brewer, PD ^{[1
]}

Jensen, JE ^{[1
]}

Cockrum, CA ^{[1
]}

Venzor, GM ^{[1
]}

Johnson, SM ^{[1
]}

机构：

[1] SANTA BARBARA RES CTR,GOLETA,CA 93117

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 08期

关键词：

As-doping; HgCdTe; IR detectors; molecular beam epitaxy (MBE);

D O I：

10.1007/BF02655043

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A robust process has been developed for the reproducible growth of in-situ doped Hg1-xCdxTe:As alloys by molecular beam epitaxy. Net hole concentrations in excess of 5 x 10(17) cm(-3), with peak mobilities >200 cm(2)/Vs were measured in Hg0.74Cd0.26Te:As films. The p-type layers were twin-free and consistently exhibit narrow x-ray rocking curves (<40 arc sec). The reproducible growth of small lots of p-on-n LWIR detector structures has been established. For a typical lot consisting of 13 layers, the average x-value of the n-type lease layer was 0.226 with a standard deviation of 0.003. The lateral compositional uniformity across a 2.5 cm x 2.5 cm wafer was x = +/-0.0006. High performance p-on-n LWIR diodes were fabricated that exhibited R(0)A(0) values (0-fov at 78K) as large as 350 Omega cm(2) at 10.4 mu m.

引用

页码：1411 / 1415

页数：5

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