Low-loss CPW on low-resistivity Si substrates with a micromachined polyimide interface layer for RFIC interconnects

被引:77
作者
Ponchak, GE [1 ]
Margomenos, A
Katehi, LPB
机构
[1] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
关键词
attenuation; coplanar waveguide; interconnects;
D O I
10.1109/22.920142
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The measured and calculated propagation constant of coplanar waveguide (CPW) on low-resistivity silicon (1 Omega . cm) with a micromachined polyimide interface layer is presented in this paper, With this new structure, the attenuation (decibels per centimeter) of narrow CPW lines on low-resistivity silicon is comparable to the attenuation of narrow CPW lines on high-resistivity silicon, To achieve these results, a 20-mum-thick polyimide interface layer is used between the CPW and the Si substrate with the polyimide etched from the CPW slots. only a single thin-film metal layer is used in this paper, but the technology supports multiple thick metal layers that will further lower the attenuation. These new micromachined CPW lines have a measured effective permittivity of 1.3. Design rules are presented from measured characteristics and finite-element method analysis to estimate the required polyimide thickness for a given CPW geometry.
引用
收藏
页码:866 / 870
页数:5
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