Measured attenuation of coplanar waveguide on CMOS grade silicon substrates with polyimide interface layer

被引：24

作者：

Ponchak, GE

Katehi, LPB

机构：

[1] NASA, Lewis Res Ctr, Cleveland, OH 44135 USA

[2] Univ Michigan, Ann Arbor, MI 48109 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 13期

关键词：

D O I：

10.1049/el:19980840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measured propagation constant of a coplanar waveguide on CMOS grade silicon with a polyimide interface layer is presented. II is shown that the transmission line can have an attenuation comparable to other transmission lines on Si substrates if the proper polyimide thickness is used.

引用

页码：1327 / 1329

页数：3

共 6 条

[1]

Case M, 1996, IEEE MTT-S, P655, DOI 10.1109/MWSYM.1996.511025

[2] Recent advances with SiGe heterojunction bipolar transistors [J].

Gruhle, A ;

Schuppen, A .

THIN SOLID FILMS, 1997, 294 (1-2) :246-249

[3] SI/SIGE MMICS [J].

LUY, JF ;

STROHM, KM ;

SASSE, HE ;

SCHUPPEN, A ;

BUECHLER, J ;

WOLLITZER, M ;

GRUHLE, A ;

SCHAFFLER, F ;

GUETTICH, U ;

KLAASSEN, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (04) :705-714

[4] High frequency interconnects on silicon substrates [J].

Ponchak, GE ;

Downey, AN ;

Katehi, LPB .

1997 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM: DIGEST OF TECHNICAL PAPERS, 1997, :101-104

[5] L-band internally matched Si-MMIC front-end [J].

Suematsu, N ;

Ono, M ;

Kubo, S ;

Iyama, Y ;

Ishida, O .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (12) :2375-2378

[6]

WILLIAMS DF, 1991, 38 ARFTG C DIG SAN D

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