High efficiency-carrier-generation for the oxygen release reaction in indium tin oxide

Indium tin oxide (ITO) sinters were heated up to 1073 and 1273 K under the condition that P(O(2))/P* = 4.9 x 10(-4) (P*: atmospheric pressure), when P(O(2)) was approximately 50Pa, in a closed-system oxygen-gas analyzer, and the number of oxygen atoms released from ITO was quantitatively determined. The conduction electron densities were determined by Hall measurements at room temperature. It was shown that the release of one oxygen atom corresponded to the generation of two conduction electrons, i.e., the efficiency-carrier-generation for the oxygen release from the ITO was almost one. Based on the crystal structure of the ITO, the oxygen atom released was originally at the 16c site in the space group of Ia3 as an interstitial excess oxygen; O(i)".