Amorphous Pb(Zr, Ti)O3 thin film hydrogen gas sensor

被引：26

作者：

Deng, J

Zhu, W

Tan, OK

Yao, X

机构：

[1] Nanyang Technol Univ, Ctr Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Tongji Univ, Funct Mat Res Ctr, Shanghai 200092, Peoples R China

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 77卷 / 1-2期

关键词：

lead zirconate titanate; amorphous; hydrogen sensor; I-V characteristics;

D O I：

10.1016/S0925-4005(01)00707-9

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The capacitive Pd/lead zirconate titanate (PZT)/Pt devices have been fabricated with amorphous Pb(Zr-x, Ti1-x)O-3 (x = 0, 30, 53, 65, 90) thin films deposited using the sol-gel spin-coating technology. The PZT films have been characterized by TGA, DTA, X-ray diffraction (XRD), dielectric and electrical properties, and gas sensitivity measurement. It has been shown that the amorphous PZT film can be operative as a hydrogen gas sensor material. The gas sensitivity of Pd/PZT/Pt devices has been systematically studied, and it has been observed that the sensitivity of the turn-on voltage shift in de I-V curves is as large as 2.3 V at 1000 ppm hydrogen gas diluted in air. Among the PZT films with different Zr/Ti ratios, it has been investigated that the PZT film with Zr/Ti = 30/70 has the lowest dielectric loss, lowest leakage current, and highest gas sensitivity to hydrogen. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：416 / 420

页数：5

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