Evolution of surface morphology during Fe/Si(111) and Fe/Si(001) heteroepitaxy

被引：21

作者：

Kim, HJ ^{[1
]}

Noh, DY

Je, JH

Hwu, Y

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju, South Korea

[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju, South Korea

[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea

[4] Acad Sinica, Inst Phys, Taipei, Taiwan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.59.4650

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The evolution of Fe surface morphology during heteroepitaxial growth on Si(lll) and Si(001) substrates was investigated using real-time synchrotron x-ray reflectivity measurements. The growth on the Si(lll) surface was divided into the initial stage heteroepitaxial regime, the intermediate stage crossover regime, and the final-stage homoepitaxial regime. The evolution of the surface roughness in the late stage growth was described by the dynamic scaling exponent of beta similar to 0.24 consistent with reported values. On the Si(001) surface, an interlayer was formed prior to the growth of a nonepitaxial Fe layer. The roughness evolution of the Fe/Si(001) was described by beta similar to 0.36. [S0163-1829(99)04607-X].

引用

页码：4650 / 4653

页数：4

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