Long-range behavior of the layer-by-layer growth in Si/Si(111)-7x7 homoepitaxy

被引:7
作者
Noh, DY
Hwu, Y
Liang, KS
机构
[1] KWANGJU INST SCI & TECHNOL, DEPT ELECT MAT RES, KWANGJU, SOUTH KOREA
[2] ACAD SINICA, INST PHYS, TAIPEI, TAIWAN
[3] EXXON RES & ENGN CO, CORP RES LAB, ANNANDALE, NJ 08801 USA
关键词
D O I
10.1103/PhysRevB.56.R7080
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Synchrotron x-ray scattering is used to reveal the long-range behavior of the layer-by-layer growth in Si/Si(111)-7x7. During the simultaneous nucleation of the first double bilayers, the long-range order of the 7x7 reconstruction diminishes continuously and disappears at the coverage of two bilayers. Based on the intensity variation at the 7x7 peak and at the specular reflection rod during the initial growth, the amount of the first three bilayers was obtained quantitatively. In addition, we measured the surface height fluctuation function in the steady-state layer-by-layer growth regime to reveal the morphology of the growth front.
引用
收藏
页码:R7080 / R7083
页数:4
相关论文
共 11 条
[1]   NUCLEATION AND GROWTH DURING MOLECULAR-BEAM EPITAXY (MBE) OF SI ON SI(111) [J].
ALTSINGER, R ;
BUSCH, H ;
HORN, M ;
HENZLER, M .
SURFACE SCIENCE, 1988, 200 (2-3) :235-246
[2]  
[Anonymous], 1969, XRAY DIFFRACTION
[3]   DYNAMIC OBSERVATION OF SI CRYSTAL-GROWTH ON A SI(111)7X7 SURFACE BY HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY [J].
HASEGAWA, T ;
KOHNO, M ;
HOSAKA, S ;
HOSOKI, S .
PHYSICAL REVIEW B, 1993, 48 (03) :1943-1946
[4]   LEED STUDIES OF SI MOLECULAR-BEAM EPITAXY ONTO SI(111) [J].
HORN, M ;
HENZLER, M .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :428-433
[5]  
KOHLER U, 1989, J VAC SCI TECHNOL A, V7, P2860, DOI 10.1116/1.576159
[6]   REFLECTION ELECTRON-MICROSCOPY STUDY OF STRUCTURAL TRANSFORMATIONS ON A CLEAN SILICON SURFACE IN SUBLIMATION, PHASE-TRANSITION AND HOMOEPITAXY [J].
LATYSHEV, AV ;
ASEEV, AL ;
KRASILNIKOV, AB ;
STENIN, SI .
SURFACE SCIENCE, 1990, 227 (1-2) :24-34
[7]   X-RAY-SCATTERING STUDIES OF THE INTERFACIAL STRUCTURE OF AU/GAAS [J].
NOH, DY ;
HWU, Y ;
KIM, HK ;
HONG, M .
PHYSICAL REVIEW B, 1995, 51 (07) :4441-4448
[8]   X-RAY AND NEUTRON-SCATTERING FROM ROUGH SURFACES [J].
SINHA, SK ;
SIROTA, EB ;
GAROFF, S ;
STANLEY, HB .
PHYSICAL REVIEW B, 1988, 38 (04) :2297-2311
[9]   SURFACE X-RAY-SCATTERING DURING CRYSTAL-GROWTH - GE ON GE(111) [J].
VLIEG, E ;
VANDERGON, AWD ;
VANDERVEEN, JF ;
MACDONALD, JE ;
NORRIS, C .
PHYSICAL REVIEW LETTERS, 1988, 61 (19) :2241-2244
[10]  
VONHOEGEN MH, 1994, SURF SCI, V321, pL129