In situ control and analysis of the scanning tunneling microscope tip by formation of sharp needles on the Si sample and W tip

被引:8
作者
Heike, S
Hashizume, T
Wada, Y
机构
[1] Advanced Research Laboratory, Hitachi Ltd., Hatoyama
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.589131
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sharp needles on the Si(111)7x7 and Si(100)2x1 surfaces are formed in a controlled manner by applying a sample bias V-s ranging from +5.0 to +10.0 V while keeping the scanning tunneling microscope (STM) tunneling current constant. The size of the needle-shaped structure is 1-20 nm in height and 1-5 nm in diameter depending on the bias voltage and duration (1-30 s), The needle structures are utilized to counter image the scanning tip with an atomic resolution (needle formation and tip imaging=NFTI). The STM resolution for the Si(111)7x7 structure is evaluated in relation to the atomic structure of the scanning tip imaged by the NFTI method. When a bias voltage of V-s = -10.0 V is used, needle formation on the scanning tip is observed. The NFTI method gives us a conventional technique to modify and monitor in situ the scanning tip of STM. (C) 1996 American Vacuum Society.
引用
收藏
页码:1522 / 1526
页数:5
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