Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

被引：283

作者：

Lupan, Oleg ^{[1
]}

Pauporte, Thierry ^{[1
]}

Viana, Bruno

机构：

[1] Chim ParisTech, CNRS, Lab Electrochim Chim Interfaces & Modelisat Energ, UMR7575, F-75231 Paris 05, France

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 30期

关键词：

ZINC-OXIDE; ROOM-TEMPERATURE; RAMAN-SCATTERING; GALLIUM NITRIDE; NANOROD ARRAYS; P-GAN; ELECTRODEPOSITION; FABRICATION; FILMS; EMISSION;

D O I：

10.1002/adma.201000611

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

UV LEDs: The fabrication of an ITO/ZnO-nanowires/p-GaN/In-Ga LED structure is reported with an active emitting layer made of high-quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 degrees C). A narrow ultra-violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.

引用

页码：3298 / +

页数：6

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