Phosphorus-Doped p-Type ZnO Nanorods and ZnO Nanorod p-n Homojunction LED Fabricated by Hydrothermal Method

被引：117

作者：

Fang, Xuan ^{[1
,2
]}

Li, Jinhua ^{[2
]}

Zhao, Dongxu ^{[1
]}

Shen, Dezhen ^{[1
]}

Li, Binghui ^{[1
]}

Wang, Xiaohua ^{[2
]}

机构：

[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Changchun Univ Sci & Technol, Sch Sci, Changchun 130022, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2009年 / 113卷 / 50期

基金：

中国国家自然科学基金;

关键词：

OPTICAL-PROPERTIES; NANOWIRES; GROWTH; NANOTUBES; ARRAYS;

D O I：

10.1021/jp906175x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Phosphorus-doped ZnO nanorods and ZnO nanorod homojunctions were prepared by a hydrothermal method. The Structural and photoluminescent (PL) characterizations showed the P atoms doped into the ZnO crystal lattice. In low-temperature It spectra the emission peaks located at 3.310 and 3.241 eV were observed, which could be attributed to a conduction band to the phosphorus-related acceptor transition and a donor-acceptor pair transition, respectively. ZnO homojunctions were synthesized by P-doped ZnO nanorods grown oil undoped ZnO nanorods. The current-voltage (I-V) measurement based oil the ZnO nanorod p-n homojunctions showed I typical semiconductor rectification characteristic with a turn-on voltage of about 3 14 V, which meant the Conductivity of the P-doped ZnO nanorod might be a p-type conductivity. The electroluminescence was observed at room temperature for this homojunction, which contained a violet-blue emission and a broad visible band emission

引用

页码：21208 / 21212

页数：5

共 27 条

[1] Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition [J].

Cao, B. Q. ;

Lorenz, M. ;

Rahm, A. ;

von Wenckstern, H. ;

Czekalla, C. ;

Lenzner, J. ;

Benndorf, G. ;

Grundmann, M. .

NANOTECHNOLOGY, 2007, 18 (45)

[2] p-type behavior in phosphorus-doped (Zn,Mg)O device structures [J].

Heo, YW ;

Kwon, YW ;

Li, Y ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3474-3476

[3] Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates [J].

Hsu, CL ;

Chang, SJ ;

Lin, YR ;

Tsai, SY ;

Chen, IC .

CHEMICAL COMMUNICATIONS, 2005, (28) :3571-3573

[4] Undoped p-type ZnO nanorods synthesized by a hydrothermal method [J].

Hsu, Yuk Fan ;

Xi, Yan Yan ;

Tam, Kai Hang ;

Djurisic, Aleksandra B. ;

Luo, Jiaming ;

Ling, Chi Chung ;

Cheung, Chor Keung ;

Ng, Alan Man Ching ;

Chan, Wai Kin ;

Deng, Xin ;

Beling, Christopher D. ;

Fung, Stevenson ;

Cheah, Kok Wai ;

Fong, Patrick Wai Keung ;

Surya, Charles C. .

ADVANCED FUNCTIONAL MATERIALS, 2008, 18 (07) :1020-1030

[5] Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].

Hwang, DK ;

Kim, HS ;

Lim, JH ;

Oh, JY ;

Yang, JH ;

Park, SJ ;

Kim, KK ;

Look, DC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[6] ZnO p-n junction light-emitting diodes fabricated on sapphire substrates -: art. no. 031911 [J].

Jiao, SJ ;

Zhang, ZZ ;

Lu, YM ;

Shen, DZ ;

Yao, B ;

Zhang, JY ;

Li, BH ;

Zhao, DX ;

Fan, XW ;

Tang, ZK .

APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3

[7] Metal-semiconductor Zn-ZnO core-shell nanobelts and nanotubes [J].

Kong, XY ;

Ding, Y ;

Wang, ZL .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (02) :570-574

[8] Small-diameter silicon nanowire surfaces [J].

Ma, DDD ;

Lee, CS ;

Au, FCK ;

Tong, SY ;

Lee, ST .

SCIENCE, 2003, 299 (5614) :1874-1877

[9] p-type behavior from Sb-doped ZnO heterojunction photodiodes [J].

Mandalapu, LJ ;

Xiu, FX ;

Yang, Z ;

Zhao, DT ;

Liu, JL .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[10]

Park CH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.073202

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