p-type behavior from Sb-doped ZnO heterojunction photodiodes

被引：116

作者：

Mandalapu, LJ ^{[1
]}

Xiu, FX ^{[1
]}

Yang, Z ^{[1
]}

Zhao, DT ^{[1
]}

Liu, JL ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.2186516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antimony (Sb) doping was used to realize p-type ZnO films on n-Si (100) substrates by molecular beam epitaxy. These samples were fabricated into p-n heterojunction diodes. p-type behavior of Sb-doped ZnO was studied by carrying out I-V and capacitance-voltage (C-V) measurements. I-V curves showed rectifying behavior similar to a p-type Schottky diode with a turn-on voltage around 2.4 V, which is consistent with the Schottky barrier of about 2.2 V obtained from C-V characterization. Good photoresponse in the UV region was obtained, which further proved that Sb doping could be used to fabricate p-type ZnO for photodetector and other optoelectronic applications. (c) 2006 American Institute of Physics.

引用

页数：3

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