Aperture dependent loss analysis in vertical-cavity surface-emitting lasers

被引：9

作者：

Bond, AE ^{[1
]}

Dapkus, PD ^{[1
]}

O'Brien, JD ^{[1
]}

机构：

[1] Univ So Calif, Los Angeles, CA 90089 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 04期

关键词：

aluminum arsenide oxide; distributed Bragg reflector lasers; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.752527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of the influence of oxide apertures on the internal loss in vertical-cavity surface-emitting lasers (VCSEL's) is performed for two different aperture placements within the VCSEL cavity. It is found that when apertures are placed at a node in the standing wave of a VCSEL cavity there are negligible aperture dependent losses, However, when apertures are placed at an antinode there is a clear relationship between aperture dimension and internal loss.

引用

页码：397 / 399

页数：3

共 16 条

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