High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN

被引：14

作者：

Cai, DJ

Xu, FC

Kang, JY ^{[1
]}

Gibart, P

Beaumont, B

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[2] Xiamen Univ, Photon Res Ctr, Xiamen 361005, Peoples R China

[3] Lumilog, F-06220 Vallauris, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1929866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-spatial-resolution strain measurement by Auger electron spectroscopy was established and applied to analyze the strain distributions in epitaxial-lateral-overgrowth (ELO) GaN. The theoretical N KVV Auger line was set by fitting the experimental data and then the relation between Auger shift and strain was obtained. By this relation the local strain distributions in regions of special interest were measured, which well interpret the mechanism of ELO process. A crucial stage for strain release was found within a distance range above the mask. This evidence confirms the existence of the Auger physical shift. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 24 条

[1] Strain relaxation and its effect in exciton resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates
Ashrafi, ABMA
Binh, NT
Zhang, BP
Segawa, Y
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (15) : 2814 - 2816
[2] Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary
Benyoucef, M
Kuball, M
Hill, G
Wisnom, M
Beaumont, B
Gibart, P
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (25) : 4127 - 4129
[3] Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy
Bertram, F
Riemann, T
Christen, J
Kaschner, A
Hoffmann, A
Thomsen, C
Hiramatsu, K
Shibata, T
Sawaki, N
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (03) : 359 - 361
[4] Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces -: art. no. 073305
Cai, DJ
Kang, JY
Zhu, ZZ
[J]. PHYSICAL REVIEW B, 2003, 68 (07)
[5] CHEMICAL EFFECTS ON CORE-ELECTRON BINDING ENERGIES IN IODINE AND EUROPIUM
FADLEY, CS
HAGSTROM, SB
KLEIN, MP
SHIRLEY, DA
[J]. JOURNAL OF CHEMICAL PHYSICS, 1968, 48 (08) : 3779 - &
[6] VALENCE-BAND AUGER LINE-SHAPES FOR SI SURFACES - SIMPLIFIED THEORY AND CORRECTED NUMERICAL RESULTS
FEIBELMAN, PJ
MCGUIRE, EJ
[J]. PHYSICAL REVIEW B, 1978, 17 (02): : 690 - 698
[7] Bending of dislocations in GaN during epitaxial lateral overgrowth
Gradecak, S
Stadelmann, P
Wagner, V
Ilegems, M
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (20) : 4648 - 4650
[8] High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN
Hayes, JM
Kuball, M
Bell, A
Harrison, I
Korakakis, D
Foxon, CT
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2097 - 2099
[9] INHOMOGENEOUS ELECTRON-GAS
RAJAGOPAL, AK
CALLAWAY, J
[J]. PHYSICAL REVIEW B, 1973, 7 (05) : 1912 - 1919
[10] Micro-Raman imaging of GaN hexagonal island structures
Holtz, M
Seon, M
Prokofyeva, T
Temkin, H
Singh, R
Dabkowski, FP
Moustakas, TD
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (12) : 1757 - 1759

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