Surface-related emission in highly luminescent CdSe quantum dots

被引：497

作者：

Wang, XY

Qu, LH

Zhang, JY

Peng, XG

Xiao, M ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] Univ Arkansas, Dept Chem & Biochem, Fayetteville, AR 72701 USA

来源：

NANO LETTERS | 2003年 / 3卷 / 08期

关键词：

D O I：

10.1021/nl0342491

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report our experimental studies of surface-related emission in highly luminescent CdSe quantum dots (QDs) with controlled quantum yield and photooxidation by time-resolved photoluminescence measurements. This kind of surface-related emission, with a radiative lifetime of tens of nanoseconds, implies the involvement of surface states in the carrier recombination process of such highly luminescent CdSe QDs.

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收藏

页码：1103 / 1106

页数：4

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