Fully Flexible Solution-Deposited ZnO Thin-Film Transistors

被引：169

作者：

Song, Keunkyu ^{[1
]}

Noh, Junghun ^{[2
]}

Jun, Taehwan ^{[1
]}

Jung, Yangho ^{[1
]}

Kang, Hae-Yoon ^{[1
]}

Moon, Jooho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Samsung Elect Co LTD, LCD R&D Ctr, Gyeonggi Do 449711, South Korea

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 38期

关键词：

FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; LOW-VOLTAGE; LARGE-AREA; TRANSPARENT; SILICON; TEMPERATURE;

D O I：

10.1002/adma.201002163

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Solution-processed, fully flexible ZnO thin-film transistors (TFTs) on semitransparent substrates are demonstrated. Our devices show exceptional and unprecedented stablity against various bending stresses, i.e., bending, rolling, wearing, and folding, exhibiting no degradation at tensile strains up to 6.35%.

引用

页码：4308 / +

页数：6

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