Growth of ZnO and device applications

被引：33

作者：

Iwata, K ^{[1
]}

Tampo, H ^{[1
]}

Yamada, A ^{[1
]}

Fons, P ^{[1
]}

Matsubara, K ^{[1
]}

Sakurai, K ^{[1
]}

Ishizuka, S ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058564, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

ZnO; ZnO on Si; ZnOSe; II-VI; MBE; bandgap engineering; p-ZnO;

D O I：

10.1016/j.apsusc.2004.10.109

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm(2)/(Vs) and carrier concentrations of 7 x 10(16) cm(-3) were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：504 / 510

页数：7