S doping in ZnO film by supplying ZnS species with pulsed-laser-deposition method

被引：153

作者：

Yoo, YZ

Jin, ZW

Chikyow, T

Fukumura, T

Kawasaki, M

Koinuma, H

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1521577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

S-doped ZnO (ZnO:S) film was fabricated by supplying ZnS species from laser ablation of a ZnS target during ZnO growth. Variations of lattice constants and band gaps with respect to S content did not follow Vegard's law. The ZnO:S film showed semiconducting behavior with lower activation energy and resistivity than those of ZnO owing to higher carrier concentration. Despite the absence of magnetic elements, the large magnetoresistance amount of 26% was observed at 3 K from ZnO:S film. (C) 2002 American Institute of Physics.

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页码：3798 / 3800

页数：3

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