Growth of ZnO and device applications

被引：33

作者：

Iwata, K ^{[1
]}

Tampo, H ^{[1
]}

Yamada, A ^{[1
]}

Fons, P ^{[1
]}

Matsubara, K ^{[1
]}

Sakurai, K ^{[1
]}

Ishizuka, S ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058564, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

ZnO; ZnO on Si; ZnOSe; II-VI; MBE; bandgap engineering; p-ZnO;

D O I：

10.1016/j.apsusc.2004.10.109

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm(2)/(Vs) and carrier concentrations of 7 x 10(16) cm(-3) were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：504 / 510

页数：7

共 33 条

[21] MBE growth of ZnSSeO alloy using ZnS as a sulfur source [J].

Nabetani, Y ;

Ito, Y ;

Mukawa, T ;

Okuno, T ;

Kato, T ;

Matsumoto, T ;

Hirai, T .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :595-598

[22]

PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P54

[23] Neutral-donor-bound-exciton complexes in ZnO crystals [J].

Reynolds, DC ;

Look, DC ;

Jogai, B ;

Litton, CW ;

Collins, TC ;

Harsch, W ;

Cantwell, G .

PHYSICAL REVIEW B, 1998, 57 (19) :12151-12155

[24] High-quality, melt-grown ZnO single crystals [J].

Reynolds, DC ;

Litton, CW ;

Look, DC ;

Hoelscher, JE ;

Claflin, B ;

Collins, TC ;

Nause, J ;

Nemeth, B .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (09) :4802-4805

[25] Characterization of ZnO crystals by photoluminescence spectroscopy [J].

Shibata, H ;

Watanabe, M ;

Sakai, M ;

Oka, K ;

Fons, P ;

Iwata, K ;

Yamada, A ;

Matsubara, K ;

Sakurai, K ;

Tampo, H ;

Nakahara, K ;

Niki, S .

11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04) :872-875

[26] Reconstructions of the GaN(000(1)over-bar) surface [J].

Smith, AR ;

Feenstra, RM ;

Greve, DW ;

Neugebauer, J ;

Northrup, JE .

PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3934-3937

[27] CALCULATION OF ENERGY-BAND GAPS IN QUATERNARY III-V ALLOYS [J].

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (05) :919-939

[28] ELECTRONIC STRUCTURES OF SEMICONDUCTOR ALLOYS [J].

VANVECHTEN, JA ;

BERGSTRESSER, TK .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (08) :3351-+

[29] RED SHIFT OF PHOTOLUMINESCENCE AND ABSORPTION IN DILUTE GAASN ALLOY LAYERS [J].

WEYERS, M ;

SATO, M ;

ANDO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L853-L855

[30]

Yamamoto T, 2002, PHYS STATUS SOLIDI A, V193, P423, DOI 10.1002/1521-396X(200210)193:3<423::AID-PSSA423>3.0.CO

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