High-Performance n-Channel Organic Thin-Film Transistor for CMOS Circuits Using Electron-Donating Self-Assembled Layer

被引：19

作者：

Kim, Sung Hoon ^{[1
,2
]}

Lee, Sun Hee ^{[1
,2
]}

Jang, Jin ^{[1
,2
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[2] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

关键词：

n-type; organic thin-film transistor (OTFT); PDI-8CN(2); self-assembled monolayer (SAM); solution process; FIELD-EFFECT TRANSISTORS; CONTACT RESISTANCE; PENTACENE; INJECTION;

D O I：

10.1109/LED.2010.2052092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN(2)). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm(2)/(V . s), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm(2)/(V . s) and threshold voltage of -1.1 V.

引用

页码：1044 / 1046

页数：3

共 18 条

[1] Controlling Electron and Hole Charge Injection in Ambipolar Organic Field-Effect Transistors by Self-Assembled Monolayers [J].

Cheng, Xiaoyang ;

Noh, Yong-Young ;

Wang, Jianpu ;

Tello, Marta ;

Frisch, Johannes ;

Blum, Ralf-Peter ;

Vollmer, Antje ;

Rabe, Juergen P. ;

Koch, Norbert ;

Sirringhaus, Henning .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (15) :2407-2415

[2] Enhanced Performance of Fullerene n-Channel Field-Effect Transistors with Titanium Sub-Oxide Injection Layer [J].

Cho, Shinuk ;

Seo, Jung Hwa ;

Lee, Kwanghee ;

Heeger, Alan J. .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (09) :1459-1464

[3] Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics [J].

Facchetti, A ;

Yoon, MH ;

Marks, TJ .

ADVANCED MATERIALS, 2005, 17 (14) :1705-1725

[4] An experimental study of contact effects in organic thin film transistors [J].

Gundlach, D. J. ;

Zhou, L. ;

Nichols, J. A. ;

Jackson, T. N. ;

Necliudov, P. V. ;

Shur, M. S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)

[5] Lifetime of organic thin-film transistors with organic passivation layers - art. no. 073519 [J].

Han, SH ;

Kim, JH ;

Jang, J ;

Cho, SM ;

Oh, MH ;

Lee, SH ;

Choo, DJ .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[6] Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes [J].

Kitamura, Masatoshi ;

Kuzumoto, Yasutaka ;

Aomori, Shigeru ;

Kamura, Masakazu ;

Na, Jong Ho ;

Arakawa, Yasuhiko .

APPLIED PHYSICS LETTERS, 2009, 94 (08)

[7] High-performance thin-film transistor with 6,13-bis(triisopropylsilylethynyl) pentacene by inkjet printing [J].

Lee, Sun Hee ;

Choi, Min Hee ;

Han, Seung Hoon ;

Choo, Dong Joon ;

Jang, Jin ;

Kwon, Soon Ki .

ORGANIC ELECTRONICS, 2008, 9 (05) :721-726

[8] All-solution-processed n-type organic transistors using a spinning metal process [J].

Lee, TW ;

Byun, Y ;

Koo, BW ;

Kang, IN ;

Lyu, YY ;

Lee, CH ;

Pu, L ;

Lee, SY .

ADVANCED MATERIALS, 2005, 17 (18) :2180-2184

[9] Contact resistance extraction in pentacene thin film transistors [J].

Necliudov, PV ;

Shur, MS ;

Gundlach, DJ ;

Jackson, TN .

SOLID-STATE ELECTRONICS, 2003, 47 (02) :259-262

[10]

NEWMAN CR, 2004, CHEM MATER, V16, P4824

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