Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals

被引：21

作者：

Shreter, YG ^{[1
]}

Rebane, YT ^{[1
]}

Klyavin, OV ^{[1
]}

Aplin, PS ^{[1
]}

Axon, CJ ^{[1
]}

Young, WT ^{[1
]}

Steeds, JW ^{[1
]}

机构：

[1] UNIV BRISTOL,HH WILLS PHYS LAB,BRISTOL BS8 1TL,AVON,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00756-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It has been found that the Y-0 line appears in photoluminescence (PL) and absorption of n-ZnSe crystals after plastic deformation. The concept of the dislocation exciton has been used to interpret the results. The binding energy of the dislocation exciton has been determined as 27 meV. It is suggested that dislocation excitons are destroyed by dislocation charge and, therefore, the Y-0 line can be related only to uncharged or slightly charged dislocations. It has also been found that the edge of the absorption spectra of the deformed and undeformed crystals are significantly extended as a result of the Franz-Keldysh effect from charged dislocations. Stress birefringence has also been observed in the deformed crystal.

引用

页码：883 / 888

页数：6

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