Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H films

被引：6

作者：

Aldabergenova, SB

Albrecht, M

Strunk, HP

Viner, J

Taylor, PC

Andreev, AA

机构：

[1] Univ Erlangen Nurnberg, Inst Werkstoffwissensch, D-91058 Erlangen, Germany

[2] Univ Utah, Salt Lake City, UT 84112 USA

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期

关键词：

Er3+ emission; stark splitting; microstructure; a-Si : H matrix; optimal ligand field;

D O I：

10.1016/S0921-5107(00)00682-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ErO6 complexes, where every Er3+ ion is surrounded by six oxygen atoms forming an octahedron with C-3v point symmetry are found to explain the strong Stark splitting of the characteristic Er3+ emission observed in the 1460-1610 nm range. An a-Si:H matrix serves as an ideal semiconductor host to permit co-doped O atoms to form an optimal ligand field around Er3+ ions. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：29 / 31

页数：3

共 9 条

[1] PHOTOLUMINESCENCE MEASUREMENTS ON ERBIUM-DOPED SILICON [J].

DEMAATGERSDORF, I ;

GREGORKIEWICZ, T ;

AMMERLAAN, CAJ ;

SOBOLEV, NA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (05) :666-671

[2]

GABRELYAN VT, 1970, PHYS STATUS SOLIDI, V3, P37

[3]

GLIEMAN G, 1987, ENCY PHYS SCI TECHNO, V7, P210

[4] Photoluminescence spectral lines identification in Ho3+-, Er3+-, and Tm3+-doped MgxZn1-xSe single crystals [J].

Kim, YG ;

Song, HJ ;

Oh, SK ;

Kim, WT ;

Park, KH ;

Kim, DT ;

Jin, MS ;

Kim, CD ;

Yoon, CS .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (04) :1227-1234

[5] Local environment of erbium atoms in amorphous hydrogenated silicon [J].

Masterov, VF ;

Nasredinov, FS ;

Seregin, PP ;

Kudoyarova, VK ;

Kuznetsov, AN ;

Terukov, EI .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :728-730

[6] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON [J].

MICHEL, J ;

BENTON, JL ;

FERRANTE, RF ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

XIE, YH ;

POATE, JM ;

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2672-2678

[7] ERBIUM POINT-DEFECTS IN SILICON [J].

NEEDELS, M ;

SCHLUTER, M ;

LANNOO, M .

PHYSICAL REVIEW B, 1993, 47 (23) :15533-15536

[8] Optically active erbium centers in silicon [J].

Przybylinska, H ;

Jantsch, W ;

SuprunBelevitch, Y ;

Stepikhova, M ;

Palmetshofer, L ;

Hendorfer, G ;

Kozanecki, A ;

Wilson, RJ ;

Sealy, BJ .

PHYSICAL REVIEW B, 1996, 54 (04) :2532-2547

[9] Role of codopant oxygen in erbium-doped silicon [J].

Wan, J ;

Ling, Y ;

Sun, Q ;

Wang, X .

PHYSICAL REVIEW B, 1998, 58 (16) :10415-10420

← 1 →