A temperature-accelerated method to evaluate data retention of resistive switching nonvolatile memory

被引：16

作者：

Chen, An ^{[1
]}

Haddad, Sameer ^{[1
]}

Wu, Yi-Ching ^{[1
]}

机构：

[1] Spans Inc, Adv Memory Dev Grp, Sunnyvale, CA 94088 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

nonvolatile memory; resistive random access memory (RRAM); retention; trapping;

D O I：

10.1109/LED.2007.910753

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A switching model of conductivity modulation by a charge trapping process is proposed to describe the resistive switching in nonvolatile metal-insulator-metal (MIM) memory. Based on a quantitative detrapping analysis, retention is explained by the thermal release time of trapped charges, which is determined by trap depth and temperature. A characteristic temperature is defined at which a significant loss of retention would occur. A temperature-accelerated test is devised to measure the characteristic temperature and to give an early input on the worst-case retention for a given technology. The viability of this method is demonstrated using Cu2O MIM memory.

引用

页码：38 / 40

页数：3

共 14 条

[1] Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].