Improved electrical characteristics and reliability of MILC poly-Si TFTs using fluorine-ion implantation

被引：17

作者：

Chang, Chih-Pang ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 11期

关键词：

fluorine-ion implantation; metal-induced lateral crystallization (MILC); polycrystalline-silicon thin-film transistors (poly-Si TFTs);

D O I：

10.1109/LED.2007.906803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implanted MILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.

引用

页码：990 / 992

页数：3

共 19 条

[1] HOT-ELECTRON DEGRADATION OF N-CHANNEL POLYSILICON MOSFETS [J].

BANERJEE, S ;

SUNDARESAN, R ;

SHICHIJO, H ;

MALHI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :152-157

[2] Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors [J].

Bhat, GA ;

Kwok, HS ;

Wong, M .

SOLID-STATE ELECTRONICS, 2000, 44 (07) :1321-1324

[3] Effects of longitudinal grain boundaries on the performance of MILC-TFT's [J].

Bhat, GA ;

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :97-99

[4]

CHERN HN, 1994, IEEE T ELECTRON DEV, V41, P698, DOI 10.1109/16.285019

[5] PHYSICAL MODELS FOR DEGRADATION EFFECTS IN POLYSILICON THIN-FILM TRANSISTORS [J].

HACK, M ;

LEWIS, AG ;

WU, IW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (05) :890-897

[6] Performance of thin-film transistors with ultrathin Ni-MILC polycrystalline silicon channel layers [J].

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (04) :167-169

[7] Poly-Si TFT fabricated by laser-induced in-situ fluorine passivation and laser doping [J].

Kim, CH ;

Jung, SH ;

Yoo, JS ;

Han, MK .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :396-398

[8]

LEE SW, 1996, IEEE ELECTR DEVICE L, V17, P4

[9] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[10] High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications [J].

Meng, ZG ;

Wang, MX ;

Wong, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :404-409

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