Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive

被引:24
作者
Hultåker, A
Järrendahl, K
Lu, J
Granqvist, CG
Niklasson, GA
机构
[1] Uppsala Univ, Angstrom Lab, Dept Mat Sci, SE-75121 Uppsala, Sweden
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
关键词
dielectric function; conductivity; ellipsometry; transmission electron microscopy;
D O I
10.1016/S0040-6090(01)01048-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin doped indium oxide (ITO) films with a few mol% of silver were prepared by reactive DC magnetron sputtering. The purpose of adding silver is to boost conductivity. The real part of the refractive index of ITO was determined from ellipsometry data, applying a model combining a Drude and a Lorentz term. The imaginary part was calculated from the absorptance, which was derived from transmittance and reflectance data. We found that up to 6 mol% of silver additive enhanced the conductivity by as much as a factor of two for layers post-treated at 200 and 300 degreesC in reducing gas consisting of 93% N(2) and 7% H(2). For samples with 1 mol% silver, which was post-treated at 100 and 200 degreesC, we observed an increase in the luminous transmittance. The transmittance decreased with increased silver content. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:305 / 310
页数:6
相关论文
共 19 条
[1]   CORRELATIONS BETWEEN THE THERMOELECTRIC-POWER AND HALL-EFFECT OF SN OR GE DOPED IN2O3 SEMICONDUCTORS [J].
CAMPET, G ;
HAN, SD ;
WEN, SJ ;
SHASTRY, MCR ;
CHAMINADE, B ;
MARQUESTAUT, E ;
PORTIER, J ;
DORDOR, P .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 22 (2-3) :274-278
[2]  
GERLACH E, 1977, FESTKORPERPROBLEME, V17, P157
[3]   TRANSPARENT CONDUCTIVE ELECTRODES FOR ELECTROCHROMIC DEVICES - A REVIEW [J].
GRANQVIST, CG .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (01) :19-24
[4]   Grain size control in nanocrystalline In2O3 semiconductor gas sensors [J].
Gurlo, A ;
Ivanovskaya, M ;
Barsan, N ;
Schweizer-Berberich, M ;
Weimar, U ;
Gopel, W ;
Dieguez, A .
SENSORS AND ACTUATORS B-CHEMICAL, 1997, 44 (1-3) :327-333
[5]  
HAMBERG I, 1986, J APPL PHYS, V60, P123
[6]  
HULTAKER A, 2000, THESIS UPPSALA U, P38
[7]   Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance [J].
Kim, JS ;
Granstrom, M ;
Friend, RH ;
Johansson, N ;
Salaneck, WR ;
Daik, R ;
Feast, WJ ;
Cacialli, F .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6859-6870
[8]   GERMANIUM-DOPED AND SILICON-DOPED INDIUM-OXIDE THIN-FILMS PREPARED BY RADIOFREQUENCY MAGNETRON SPUTTERING [J].
MARUYAMA, T ;
TAGO, T .
APPLIED PHYSICS LETTERS, 1994, 64 (11) :1395-1397
[9]   Preparation of highly transparent and conducting Ga2O3-In2O3 films by direct current magnetron sputtering [J].
Minami, T ;
Takeda, Y ;
Kakumu, T ;
Takata, S ;
Fukuda, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :958-962
[10]   SINTERING AND ELECTRICAL-PROPERTIES OF TITANIA-CONTAINING AND ZIRCONIA-CONTAINING IN2O3-SNO2 (ITO) CERAMICS [J].
NADAUD, N ;
NANOT, M ;
BOCH, P .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (03) :843-846