SINTERING AND ELECTRICAL-PROPERTIES OF TITANIA-CONTAINING AND ZIRCONIA-CONTAINING IN2O3-SNO2 (ITO) CERAMICS

被引：91

作者：

NADAUD, N

NANOT, M

BOCH, P

机构：

[1] Ceramics laboratory, Ecole Supérieure de Physique et de Chimie Industrielles, Paris

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1994年 / 77卷 / 03期

关键词：

D O I：

10.1111/j.1151-2916.1994.tb05376.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The deposition rate and film quality of In2O3-SnO2 (ITO) transparent electrodes processed by sputtering are improved when using dense sputtering targets. Unfortunately, ITO ceramics do not sinter easily. It is shown that addition of TiO2 (<1 wt%) to ITO greatly increases densification without degrading electrical properties of sputtered films. The influence of ZrO2 and SiO2 was also investigated.

引用

页码：843 / 846

页数：4

共 13 条

[1] STUDIES ON EVAPORATED INDIUM TIN OXIDE (ITO) SILICON JUNCTIONS AND AN ESTIMATION OF ITO WORK FUNCTION
BALASUBRAMANIAN, N
SUBRAHMANYAM, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 322 - 324
[2] PREPARATION OF CONDUCTING AND TRANSPARENT THIN-FILMS OF TIN-DOPED INDIUM OXIDE BY MAGNETRON SPUTTERING
BUCHANAN, M
WEBB, JB
WILLIAMS, DF
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 213 - 215
[3] CHERMANT JL, 1992, CARACTERISATION POUD, pCH2
[4] De Wit J. H. W., 1977, SCI CERAM, V9, P143
[5] HIGH-TEMPERATURE BEHAVIOR OF IN2O3
DEWIT, JHW
[J]. JOURNAL OF SOLID STATE CHEMISTRY, 1975, 13 (03) : 192 - 200
[6] ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS
FRANK, G
KOSTLIN, H
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04): : 197 - 206
[7] GASGNIER G, 1991, THESIS U LIMOGES LIM
[8] INFLUENCE OF MANUFACTURING PROCESS OF INDIUM TIN OXIDE SPUTTERING TARGETS ON SPUTTERING BEHAVIOR
GEHMAN, BL
JONSSON, S
RUDOLPH, T
SCHERER, M
WEIGERT, M
WERNER, R
[J]. THIN SOLID FILMS, 1992, 220 (1-2) : 333 - 336
[9] OPTICAL AND ELECTRICAL PROPERTIES OF TIN OXIDE FILMS
ISHIGURO, K
SASAKI, T
ARAI, T
IMAI, I
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (03) : 296 - 304
[10] THE INFLUENCE OF SUBSTRATE-TEMPERATURE AND SPUTTERING GAS ATMOSPHERE ON THE ELECTRICAL-PROPERTIES OF REACTIVELY SPUTTERED INDIUM TIN OXIDE-FILMS
NISHIKAWA, S
[J]. THIN SOLID FILMS, 1986, 135 (02) : 219 - 228

← 1 2 →