SINTERING AND ELECTRICAL-PROPERTIES OF TITANIA-CONTAINING AND ZIRCONIA-CONTAINING IN2O3-SNO2 (ITO) CERAMICS

被引:91
作者
NADAUD, N
NANOT, M
BOCH, P
机构
[1] Ceramics laboratory, Ecole Supérieure de Physique et de Chimie Industrielles, Paris
关键词
D O I
10.1111/j.1151-2916.1994.tb05376.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The deposition rate and film quality of In2O3-SnO2 (ITO) transparent electrodes processed by sputtering are improved when using dense sputtering targets. Unfortunately, ITO ceramics do not sinter easily. It is shown that addition of TiO2 (<1 wt%) to ITO greatly increases densification without degrading electrical properties of sputtered films. The influence of ZrO2 and SiO2 was also investigated.
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页码:843 / 846
页数:4
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