Compensation mechanisms in ZnSe:N and codoped ZnSe:N:Cl

被引：20

作者：

Behringer, M ^{[1
]}

Baume, P ^{[1
]}

Gutowski, J ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, D-28359 Bremen, Germany

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.57.12869

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Codoping experiments in ZnSe with Cl and N have been performed and the photoluminescence as well as the carrier concentrations have been studied to investigate the reason for compensation in ZnSe:N. Evidence could be given that not crystalline defects but rather potential fluctuations cause the often observed redshifted and broadened donor-acceptor-pair band in compensated layers. In addition, a quantitative study on these potential fluctuations could be performed by varying the chlorine concentration in p-type doped ZnSe:N:Cl. It has been shown that a chlorine concentration of 6 x 10(17) cm(-3) in the codoped layers already causes a shift of the main donor-acceptor-pair band emission energy of about 120 meV. By investigating the photoluminescence spectra of samples with different chlorine concentrations, a relation between the amount of ionized impurities and the redshift in emission energy has been given.

引用

页码：12869 / 12873

页数：5

共 27 条

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[2]

BAUME P, 1995, APPL PHYS LETT, V67, P1914, DOI 10.1063/1.114566

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