Time-resolved luminescence studies of heavily nitrogen doped ZnSe

被引：12

作者：

Kothandaraman, C ^{[1
]}

Kuskovsky, I ^{[1
]}

Neumark, GF ^{[1
]}

Park, RM ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.117992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved luminescence data from heavily nitrogen doped ZnSe (total N concentration exceeding mid-10(18)s/cm(3)) is presented. The luminescence exhibited a decay time and arise time which increased with decreasing energy of observation. Furthermore, both the decay times and rise times decreased with increasing temperature. These observations are consistent with the following model: (i) a band of states is created due to fluctuations in the ionized impurity concentrations; (ii) a portion of the carriers captured by the shallower impurity states are transferred to deeper states prior to recombination. (C) 1996 American Institute of Physics.

引用

页码：1523 / 1525

页数：3

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