PERSISTENT PHOTOCONDUCTIVITY IN II-VI AND III-V SEMICONDUCTOR ALLOYS AND A NOVEL INFRARED DETECTOR

被引:40
作者
JIANG, HX
BROWN, G
LIN, JY
机构
[1] Department of Physics, Cardwell Hall, Kansas State University, Manhattan
关键词
D O I
10.1063/1.348889
中图分类号
O59 [应用物理学];
学科分类号
摘要
Persistent photoconductivity (PPC) mechanisms, as well as the similarities and the differences of PPC properties in II-VI and III-V semiconductor alloys have been investigated. The potential applications based on PPC phenomenon in these two kinds of materials are discussed. We have observed that PPC induced in a II-VI mixed crystal by visible (above band gap) ilumination can be quenched by long wavelength infrared radiation even at room temperature, which further supports our interpretation that PPC in II-VI mixed crystals is caused by random local potential fluctuations induced by compositional fluctuations. A newly developed infrared detector based on the PPC infrared quenching property of II-VI semiconductor alloys is also reported.
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页码:6701 / 6703
页数:3
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