PERSISTENT PHOTOCONDUCTIVITY AND RELATED CRITICAL PHENOMENA IN ZN0.3CD0.7SE

被引：66

作者：

JIANG, HX

LIN, JY

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.40.10025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：10025 / 10028

页数：4

相关论文

共 25 条

[1] INFLUENCE OF CLUSTERING ON THE MOBILITY OF III-V SEMICONDUCTOR ALLOYS
BLOOD, P
GRASSIE, ADC
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1866 - 1868
[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW B, 1989, 39 (14): : 10063 - 10074
[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
CHADI, DJ
CHANG, KJ
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (07) : 873 - 876
[4] DOPING AND ANNEALING EFFECTS ON PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES
CHOI, SH
YOO, BS
LEE, CC
JANG, J
[J]. PHYSICAL REVIEW B, 1987, 36 (12): : 6479 - 6485
[5] PERCOLATIVE ASPECTS IN PHOTOCONDUCTIVITY
DOMES, H
LEYRER, R
HAARER, D
BLUMEN, A
[J]. PHYSICAL REVIEW B, 1987, 36 (08): : 4522 - 4524
[6] DONOR-ACCEPTOR RECOMBINATION KINETICS IN AN EXACTLY COMPENSATED CRYSTAL - A MONTE-CARLO CALCULATION
EGGERT, JR
[J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6669 - 6671
[7] MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON SUPERLATTICES
HUNDHAUSEN, M
LEY, L
[J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6655 - 6662
[8] NEUTRAL DONOR-ACCEPTOR-PAIR RECOMBINATION UNDER A UNIFORM ELECTRIC-FIELD
JIANG, HX
[J]. PHYSICAL REVIEW B, 1988, 37 (08): : 4126 - 4131
[9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
LANG, DV
LOGAN, RA
JAROS, M
[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
[10] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS
LANG, DV
LOGAN, RA
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639