Atomic structure studies of (113)B GaAs surfaces grown by metalorganic vapor phase epitaxy

被引：11

作者：

Kawase, M ^{[1
]}

Ishikawa, Y ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

GaAs; metalorganic vapor phase epitaxy (MOVPE); ultrahigh-vacuum scanning tunneling microscopy (UHV-STM); reflection high-energy electron diffraction (RHEED); (113)B; surface reconstruction;

D O I：

10.1016/S0169-4332(98)00101-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Microscopic structure on GaAs (113)B surface grown by metalorganic vapor phase epitaxy (MOVPE) is studied by reflection high-energy electron diffraction (RHEED) and ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). Monolayer steps and wide terraces are observed on the (113)B GaAs surfaces similar to the case for (001) surfaces. On the wide terraces, small two-dimensional islands and holes are also recognized. RHEED patterns show streaks corresponding to the periods of about 0.8 nm perpendicular to [<3(3)over bar>2] direction and about 0.7 nm perpendicular to [110] direction, indicating the existence of the surface reconstruction. The period of 0.66 nm to [<3(3)over bar>2] direction is confirmed by STM observation, although the period to [110] direction cannot be confirmed. Based on these results, a possible model for the reconstruction structure on GaAs (113)B surface is proposed, and the stability of (113)B GaAs surface is discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：457 / 463

页数：7

共 19 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[2] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA ;

TERSOFF, J ;

FEIN, AP .

PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195

[3] MULTIATOMIC STEP FORMATION MECHANISM OF METALORGANIC VAPOR-PHASE EPITAXIAL GROWN GAAS VICINAL SURFACES AND ITS APPLICATION TO QUANTUM-WELL WIRES [J].

FUKUI, T ;

ISHIZAKI, J ;

HARA, S ;

MOTOHISA, J ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :183-187

[4] THEORY OF POLAR SEMICONDUCTOR SURFACES [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1492-1496

[5]

IRISAWA T, UNPUB JPN J APPL PHY

[6] Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy [J].

Ishikawa, Y ;

Fukui, T ;

Hasegawa, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (3B) :1749-1755

[7] Ultra high vacuum scanning tunneling microscope observation of vicinal (001) GaAs surface and (117)B GaAs surface grown by metalorganic vapor phase epitaxy [J].

Ishizaki, JY ;

Ishikawa, Y ;

Ohkuri, K ;

Kawase, M ;

Fukui, T .

APPLIED SURFACE SCIENCE, 1997, 113 :343-348

[8] CHEMISORPTION OF H, H2O AND C2H4 ON SI(113) - IMPLICATIONS FOR THE STRUCTURE [J].

JACOBI, K ;

MYLER, U .

SURFACE SCIENCE, 1993, 284 (03) :223-235

[9] Growth of vertical cavity surface emitting laser material on (311)B GaAs by MBE [J].

Mars, DE ;

Rosner, SJ ;

Kaneko, Y ;

Nakagawa, S ;

Takeuchi, T ;

Yamada, N .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :365-371

[10] Absence of long-range ordered reconstruction on the GaAs(311)A surface [J].

Moriarty, P ;

Ma, YR ;

Dunn, AW ;

Beton, PH ;

Henini, M ;

McGinley, C ;

McLoughlin, E ;

Cafolla, AA ;

Hughes, G ;

Downes, S ;

Teehan, D ;

Murphy, B .

PHYSICAL REVIEW B, 1997, 55 (23) :15397-15400

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