Properties of electrical contacts on bulk and epitaxial n-type ZnO

被引：23

作者：

Murphy, TE ^{[1
]}

Blaszczak, JO ^{[1
]}

Moazzami, K ^{[1
]}

Bowen, WE ^{[1
]}

Phillips, JD ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 04期

关键词：

ZnO; ohmic contact; Schottky contact;

D O I：

10.1007/s11664-005-0116-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of several metal contacts to n-type ZnO (0001) were studied. The ZnO samples consisted of bulk single-crystal material, epitaxial layers on sapphire grown by molecular beam epitaxy (MBE), and polycrystalline thin films on sapphire obtained by pulsed laser deposition (PLD). Ohmic and rectifying contacts were observed dependent upon both the metal material and the ZnO surface. Ohmic contacts were characterized using the circular transmission line method (c-TLM), where contact resistivity was found to be in the range of 10(-4) - 10(-5) Omega-cm(2). Schottky behavior was observed using Ag contacts exhibiting varying leakage current and breakdown voltage dependent on the polarity of the ZnO surface.

引用

页码：389 / 394

页数：6

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