Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture

被引：7

作者：

Oh, TH ^{[1
]}

Shchekin, OB ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 08期

关键词：

Fabry-Perot resonators; laser modes; laser resonators; optical resonators; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.701503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on a single mode vertical-cavity surface-emitting laser that uses a low temperature growth of a highly resistive AlGaAs dielectric aperture, An epitaxial regrowth is used to contact the laser active region, with the AlGaAs aperture resulting in cavity-induced antiguiding. Antiguiding is observed in 6-mu m diameter devices, with single-mode operation obtained over the range of continuous-wave operation (about 8x threshold). Pulsed operation shows lowest order transverse mode profiles up to 24x threshold.

引用

页码：1064 / 1066

页数：3

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