SURFACE-DIFFUSION EFFECTS IN MBE GROWTH OF QWS ON CHANNELED SUBSTRATE (100) GAAS FOR LASERS

被引：22

作者：

MEIER, HP ^{[1
]}

VANGIESON, E ^{[1
]}

EPPERLEIN, PW ^{[1
]}

HARDER, C ^{[1
]}

WALTER, W ^{[1
]}

KRAHL, M ^{[1
]}

BIMBERG, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90353-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：66 / 70

页数：5

共 10 条

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[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATION STUDY OF GA DESORPTION FROM MOLECULAR-BEAM EPITAXIALLY GROWN ALXGA1-XAS [J].

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[10] GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].

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