RAPID THERMAL ANNEALING INDUCED ENHANCED BAND-EDGE EMISSION FROM ZnO NANOWIRES, NANORODS AND NANORIBBONS

被引：24

作者：

Dhara, Soumen ^{[1
]}

Giri, P. K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Gauhati 781039, India

来源：

FUNCTIONAL MATERIALS LETTERS | 2011年 / 4卷 / 01期

关键词：

Rapid thermal annealing; ZnO nanostructures; photoluminescence; Raman; ZINC-OXIDE NANOSTRUCTURES; LUMINESCENCE; GROWTH;

D O I：

10.1142/S1793604711001658

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter, we report on the enhanced near band edge (NBE) photoluminescence (PL) emission by rapid thermal annealing (RTA) of ZnO nanowires, nanoribbons and nanorods synthesized by vapor transport method using a ZnO nanopowder source. As a result of RTA, the intensity ratio of NBE to green emission peak is nearly doubled for the nanowires, while this enhancement is one order of magnitude for the nanoribbons and nanorods. Time-resolved PL studies on the green emission band shows a single-exponential decay (time constant similar to ns) after RTA. The Raman spectral shift of the RTA treated samples indicates reduced tensile strain in the annealed ZnO nanostructures. Our results demonstrate the effectiveness of RTA process for improving the crystallinity and optical properties of ZnO nanostructures.

引用

页码：25 / 29

页数：5

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