The growth of AlInSb by metalorganic chemical vapor deposition

被引：10

作者：

Biefeld, RM ^{[1
]}

Allerman, AA ^{[1
]}

Baucom, KC ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 06期

关键词：

AlInSb; metalorganic chemical vapor deposition (MOCVD); tritertiarybutylaluminum (TTBAl); semiconductor heterostructures;

D O I：

10.1007/s11664-998-0060-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown AlxIn1-xSb epitaxial layers by metalorganic chemical vapor deposition using tritertiarybutylaluminum (TTBAl), trimethylindium (TMIn), and triethylantimony (TESb) as sources in a high speed rotating disk reactor. Growth temperatures of 435 to 505 degrees C at 200 Torr were investigated. The V/III ratio was varied from 1.6 to 7.2 and TTBAl/(TTBAl+TMIn) ratios of 0.26 to 0.82 were investigated. AlxIn1-xSb compositions from x = 0.002 to 0.52 were grown with TTBAl/(TTBAl+TMIn) ratios of 0.62 to 0.82. Under these conditions, no Al was incorporated for TTBA1/(TTBAl+TMIn) ratios less than 0.62. Hall measurements of AlxIn1-xSb showed hole concentrations between 5 x 10(16) cm(3) to 2 x 10(17) cm(-3) and mobilities of 24 to 91 cm(2)/Vs for not intentionally doped AlxIn1-xSb.

引用

页码：L43 / L46

页数：4

共 14 条

[1]

Biefeld RM, 1996, APPL PHYS LETT, V68, P932, DOI 10.1063/1.116235

[2] GROWTH OF GA1-XALXSB AND GA1-XINXSB BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].