Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis

被引：12

作者：

Wang, YC ^{[1
]}

Hong, M ^{[1
]}

Kuo, JM ^{[1
]}

Mannaerts, JP ^{[1
]}

Kwo, J ^{[1
]}

Tsai, HS ^{[1
]}

Krajewski, JJ ^{[1
]}

Chen, YK ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, depletion-mode GaAs MOSFETs with undetectable hysteresis and negligible drain current drift I-V characteristics were successfully fabricated using MBE grown Ga2O3(Gd2O3) as the gate oxide. The absence of drain current drift and hysteresis is a significant advance towards the manufacture of commercially useful GaAs MOSFETs.

引用

页码：67 / 70

页数：4

共 9 条

[1] GALLIUM ARSENIDE MOS TRANSISTORS [J].

BECKE, H ;

HALL, R ;

WHITE, J .

SOLID-STATE ELECTRONICS, 1965, 8 (10) :813-&

[2] Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide [J].

Hong, M ;

Ren, F ;

Kuo, JM ;

Hobson, WS ;

Kwo, J ;

Mannaerts, JP ;

Lothian, JR ;

Chen, YK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1398-1400

[3] Structural properties of Ga2O3(Gd2O3)-GaAs interfaces [J].

Hong, M ;

Marcus, MA ;

Kwo, J ;

Mannaerts, JP ;

Sergent, AM ;

Chou, LJ ;

Hsieh, KC ;

Cheng, KY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1395-1397

[4] SULFIDE TREATED GAAS MISFETS WITH GATE INSULATOR OF PHOTO-CVD GROWN P3N5 FILM [J].

JEONG, YH ;

CHOI, KH ;

JO, SK .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (07) :251-253

[5] STATUS OF THE GAAS METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY [J].

MIMURA, T ;

FUKUTA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1147-1155

[6] A REVIEW OF III-V-SEMICONDUCTOR BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES AND DEVICES [J].

MUI, DSL ;

WANG, Z ;

MORKOC, H .

THIN SOLID FILMS, 1993, 231 (1-2) :107-124

[7] Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy [J].

Passlack, M ;

Hong, M ;

Mannaerts, JP .

APPLIED PHYSICS LETTERS, 1996, 68 (08) :1099-1101

[8] Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates [J].

Ren, F ;

Hong, MW ;

Hobson, WS ;

Kuo, JM ;

Lothian, JR ;

Mannaerts, JP ;

Kwo, J ;

Chen, YK ;

Cho, AY .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :943-945

[9] Demonstration of enhancement-mode p- and m-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide [J].

Ren, F ;

Hong, M ;

Hobson, WS ;

Kuo, JM ;

Lothian, JR ;

Mannaerts, JP ;

Kwo, J ;

Chu, SNG ;

Chen, YK ;

Cho, AY .

SOLID-STATE ELECTRONICS, 1997, 41 (11) :1751-1753

← 1 →